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Femtomolar Dengue Virus Type-2 DNA Detection in Back-gated Silicon Nanowire Field-effect Transistor Biosensor

Author(s):

Wan Amirah Basyarah Zainol Abidin*, Mohammad Nuzaihan Md Nor*, Mohd Khairuddin Md Arshad, Mohamad Faris Mohamad Fathil, Nor Azizah Parmin, Noor Azrina Haji Talik Sisin, Conlathan Ibau and Aidil Shazereen Azlan  

Abstract:


Background: Dengue is known as the most severe arboviral infection in the world that spread by Aedes aegypti. However, conventional and laboratory-based enzyme-linked immunosorbent assays (ELISA) are the present approached in detecting dengue virus (DENV), required skilled and well-trained personnel to operate. Therefore, the ultrasensitive and label-free technique of Silicon Nanowire (SiNW) biosensor was chosen for rapid detection of DENV.

Methods: In this study, a SiNW field-effect transistor (FET) biosensor integrated with a back-gate of the low-doped p-type Silicon-on-insulator (SOI) wafer was fabricated through conventional photolithography and Inductively Coupled Plasma – Reactive Ion Etching (ICP-RIE) for Dengue Virus type-2 (DENV-2) DNA detection. The morphological characteristics of back-gated SiNW-FET were examined using a field-emission scanning electron microscope supported by the elemental analysis via energy-dispersive X-ray spectroscopy. Results and Discussion: A complementary (target) single-stranded s deoxyribonucleic acid (ssDNA) was recognized when the target DNA was hybridized with the probe DNA attached to SiNW surfaces. Based on the slope of the linear regression curve, the back-gated SiNW-FET biosensor demonstrated the sensitivity of 3.3 nAM-1 with a detection limit of 10 fM. Furthermore, the drain and back-gate voltages were also found to influence the SiNW conductance changed.

Conclusion: Thus, the results obtained suggest that the back-gated SiNW-FET shows good stability in both biosensing applications and medical diagnosis throughout conventional photolithography method.

Keywords:

Field-effect Transistor, Biosensor, Silicon Nanowire, Back-gate, Conventional Photolithography, Dengue Virus

Affiliation:

Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis



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