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Recent Progress in Nano-electronic Devices Based on EBL and IBL

[ Vol. 16 , Issue. 2 ]

Author(s):

Yusheng Pan and Ke Xu*   Pages 157 - 169 ( 13 )

Abstract:


Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented. In each type of material, numerous practical examples are also provided in the illustration. Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities and differences between the two techniques are discussed and concluded.

Keywords:

Nano-electronic devices, electron beam lithography, ion beam lithography, nanofabrication techniques, ZnO, TiO2.

Affiliation:

School of Information & Control Engineering, Shenyang Jianzhu University, Shenyang, School of Information & Control Engineering, Shenyang Jianzhu University, Shenyang

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