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Recent Progress in Nano-electronic Devices Based on EBL and IBL

Author(s):

Yusheng Pan* and Ke Xu*  

Abstract:


Electron beam lithography and ion beam lithography are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, electron beam lithography and ion beam lithography will be given an overview and a comparison based on four types of material, namely graphene, ZnO, TiO2 and Ge. In each of these types of materials, numerous practical examples are also provided in the illustration. Later, the strengths and weakness of electron beam lithography and ion beam lithography are presented in details. Finally, their similarities and differences in the development of the recent years are discussed and concluded.

Keywords:

Nano-electronic devices, electron beam lithography, ion beam lithography, nanofabrication techniques, quantum effects, ultraviolet photolithography

Affiliation:

School of Information & Control Engineering, Shenyang Jianzhu University, Shenyang, School of Information & Control Engineering, Shenyang Jianzhu University, Shenyang



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