Lei Wang*, Shu-Ren Lu and Jing Wen Pages 113 - 116 ( 4 )
Background: Electrical probe memory using chalcogenide alloy has recently become the research focus due to its potential for the future archival storage.
Objective: In spite of its extraordinary electro-thermal characteristics, the stability of the chalcogenide alloy remains questionable because of the well-known resistance drift effect.
Method: Therefore, we here investigated the possibility of using TePdO media that was previously implemented for Blu-Ray disc as an alternative material for electrical probe memory application.
Result: A parametric approach was first deployed to find out the appropriate deposition conditions to optimize the TePdO resistivity around 100 ohm·cm. Subsequently the thickness of the TePdO film was optimized in terms of the amorphous resistivity, stability and threshold voltage.
Conclusion: Finally, the write and readout performances of the electrical probe memory were reevaluated with the use of TePdO film with respect to the proposed optimized parameters.
TePdO, archival, electrical probe, phase transformation, nanocrystalline materials, amorphous.
School of Information Engineering, Nanchang Hangkong University, 330063, Nanchang, School of Information Engineering, Nanchang Hangkong University, 330063, Nanchang, School of Information Engineering, Nanchang Hangkong University, 330063, Nanchang